GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

بواسطة Deki, M., Nitta, S., Honda, Y., Amano, H., Sandupatla, Abhinay, Arulkumaran, Subramanian, Ng, Geok Ing, Ranjan, Kumud
منشور في 2019