Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation

by Vicknesh, Sahmuganathan, Arulkumaran, Subramaniam, Ng, Geok Ing
Published 2013

Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-Diamond

by Ranjan, Kumud, Arulkumaran, S., Ng, Geok Ing, Sandupatla, A.
Published 2020

Monolithic integration of heterojunction bipolar transistors and high electron mobility transistors

by Radhakrishnan, K., Ng, Geok Ing., Yoon, Soon Fatt.
Published 2008

High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon

by Ranjan, Kumud, Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan
Published 2015

Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications

by Xing, Weichuan, Liu, Zhihong, Ng, Geok Ing, Palacios, Tomas
Published 2018

Compact true time delay line with partially shielded coplanar waveguide transmission lines

by Lim, Hong Yi, Ng, Geok Ing, Leong, Yoke Choy
Published 2013

Strategic research on RF and microwave

by Ng, Geok Ing, Lau, Wai Shing, Law, Choi Look
Published 2008

A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression

by Zhang, Junbin, Syamal, Binit, Zhou, Xing, Arulkumaran, Subramaniam, Ng, Geok Ing
Published 2016

Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate

by Whiteside, Matthew, Arulkumaran, Subramaniam, Dikme, Yilmaz, Sandupatla, Abhinay, Ng, Geok Ing
Published 2021

A modular approach to design a full three-way 8 to 18 GHz MMIC active circulator

by Lim, Hong Yi, Ng, Geok Ing, Ang, Kian Sen, Leong, Yoke Choy
Published 2013

Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser

by Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Wang, Wanjun, Ng, Geok Ing, Liu, Chongyang
Published 2018

Temperature- and current-dependent repetition frequency of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser

by Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Wang, Wanjun, Ng, Geok Ing, Liu, Chongyang
Published 2018

InAlN/GaN HEMTs on Si With High fT of 250 GHz

by Xing, Weichuan, Liu, Zhihong, Qiu, Haodong, Ranjan, Kumud, Gao, Yu, Ng, Geok Ing, Palacios, Tomás
Published 2020

High-responsivity modulation-doped AlGaAs/InGaAs thermopiles for uncooled IR-FPA utilizing integrated HEMT-MEMS technology

by Abe, Masayuki, Abe, Yuki, Kogushi, Noriaki, Ang, Kian Siong, Hofstetter, René, Wang, Hong, Ng, Geok Ing
Published 2013

GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

by Deki, M., Nitta, S., Honda, Y., Amano, H., Sandupatla, Abhinay, Arulkumaran, Subramanian, Ng, Geok Ing, Ranjan, Kumud
Published 2019

Band alignment between GaN and ZrO2 formed by atomic layer deposition

by Ye, Gang, Wang, Hong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong
Published 2014

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

by Li, Yang, Ng, Geok Ing, Arulkumaran, Subramaniam, Ye, Gang, Liu, Zhi Hong, Ranjan, Kumud, Ang, Kian Siong
Published 2017

Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering

by Fiedler, Holger, Leveneur, Jérôme, Mitchell, David R. G., Arulkumaran, Subramaniam, Ng, Geok Ing, Alphones, Arokiaswami, Kennedy, John
Published 2021

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si

by Liu, Siyu, Zhuang, Yihao, Li, Hanchao, Xie, Qingyun, Wang, Yue, Xie, Hanlin, Ranjan, Kumud, Ng, Geok Ing
Published 2024

Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser

by Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Ng, Geok Ing, Zhang, Yu, Niu, Zhichuan, Tong, Cunzhu, Liu, Chongyang
Published 2018