Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser

• المؤلفون الرئيسيون: Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Ng, Geok Ing, Zhang, Yu, Niu, Zhichuan, Tong, Cunzhu, Liu, Chongyang
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2018
• الموضوعات: Laser; Quantum Wells
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/88353; http://hdl.handle.net/10220/44613
• المؤسسة: Nanyang Technological University

Passive mode locking with a fundamental repetition rate at ∼18.46 GHz is demonstrated in a two-section InGaSb/AlGaAsSb quantum well laser emitting at 2 μm. Modal gain characteristics of the laser are investigated by performing the Hakki-Paoli method to gain better insight into the impact of the abso...