Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser

Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser

Passive mode locking with a fundamental repetition rate at ∼18.46 GHz is demonstrated in a two-section InGaSb/AlGaAsSb quantum well laser emitting at 2 μm. Modal gain characteristics of the laser are investigated by performing the Hakki-Paoli method to gain better insight into the impact of the abso...

Full description

Saved in:
Bibliographic Details
Main Authors: Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Ng, Geok Ing, Zhang, Yu, Niu, Zhichuan, Tong, Cunzhu, Liu, Chongyang
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2018
Subjects:
Laser
Quantum Wells
Online Access:https://hdl.handle.net/10356/88353
http://hdl.handle.net/10220/44613
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Description
Summary:Passive mode locking with a fundamental repetition rate at ∼18.46 GHz is demonstrated in a two-section InGaSb/AlGaAsSb quantum well laser emitting at 2 μm. Modal gain characteristics of the laser are investigated by performing the Hakki-Paoli method to gain better insight into the impact of the absorber bias voltage (Va) on the light output. The lasing action moves to longer wavelengths markedly with increasing negative Va. The light output contains more longitudinal modes in the mode locking regime if the gain bandwidth is larger at a certain Va. Our findings provide guidelines for output characteristics of the mode-locked laser.

Similar Items