Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate

• Main Authors: Whiteside, Matthew, Arulkumaran, Subramaniam, Dikme, Yilmaz, Sandupatla, Abhinay, Ng, Geok Ing
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Electrical and electronic engineering; LTE; AlN
• Online Access: https://hdl.handle.net/10356/148696
• Institution: Nanyang Technological University

AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMT) with a low-temperature epitaxy (LTE)-grown single crystalline AlN gate dielectric were demonstrated for the first time and the post-gate annealing effects at 400 °C were studied. The as-deposited LTE-AlN MISHEMT sho...