Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures

• Main Author: Whiteside, Matthew David
• Other Authors: Ng Geok Ing
• Format: Thesis-Doctor of Philosophy
• Language: English
• Published: Nanyang Technological University 2021
• Subjects: Engineering::Electrical and electronic engineering::Semiconductors; Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: https://hdl.handle.net/10356/150543
• Institution: Nanyang Technological University

AlGaN/GaN based high electron mobility transistors (HEMTs) are excellent for high-frequency and high-power applications such as DC-DC convertors, cellular base stations, radar and wireless communication systems. This is due to its excellent intrinsic material properties such as a wide band gap, high...