Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures

• 主要作者: Whiteside, Matthew David
• 其他作者: Ng Geok Ing
• 格式: Thesis-Doctor of Philosophy
• 語言: English
• 出版: Nanyang Technological University 2021
• 主題: Engineering::Electrical and electronic engineering::Semiconductors; Engineering::Electrical and electronic engineering::Microelectronics
• 在線閱讀: https://hdl.handle.net/10356/150543

AlGaN/GaN based high electron mobility transistors (HEMTs) are excellent for high-frequency and high-power applications such as DC-DC convertors, cellular base stations, radar and wireless communication systems. This is due to its excellent intrinsic material properties such as a wide band gap, high...