Growth and characterization of AlGaN/GaN HEMT heterostructures on 100-mm Si (111) by MBE

• Main Author: Manvi Agrawal
• Other Authors: K. Radhakrishnan
• Format: Theses and Dissertations
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors; DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics; DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: https://hdl.handle.net/10356/54999
• Institution: Nanyang Technological University

III-nitride semiconductors have received significant research attention and undergone immense development due to their widely found applications in microelectronic and optoelectronic devices. Among them, GaN based materials promise great potential for high frequency, high power, and high temperature...