Studies on GaN based HEMT heterostructures on 100-mm silicon grown by molecular beam epitaxy

• 主要作者: Ravikiran Lingaparthi
• 其他作者: Dharmarasu Nethaji
• 格式: Theses and Dissertations
• 語言: English
• 出版: 2015
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• 在線閱讀: https://hdl.handle.net/10356/62076
• 機構: Nanyang Technological University

GaN based high electron mobility transistors (HEMTs) have attracted great attention over the last two decades for the high power and high frequency applications due to their advantages of polarization induced high electron density, high break down field and high saturation electron velocity. Develo...