Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy

The structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm diameter Si (111) substrate by ammonia molecular beam epitaxy have been reported. High resolution X-ray diffraction, micro-Raman spectroscopy, transmission electron microscopy and secondary ion mass spectroscopy h...

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Bibliographic Details
Main Authors: Agrawal, M., Radhakrishnan, K., Dharmarasu, Nethaji, Ravikiran, Lingaparthi
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/96498
http://hdl.handle.net/10220/10299
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Institution: Nanyang Technological University
Language: English