APA引文

Agrawal, M., Radhakrishnan, K., Dharmarasu, N., Ravikiran, L., & Engineering, S. o. E. a. E. (2013). Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy.

Chicago Style Citation

Agrawal, M., K. Radhakrishnan, Nethaji Dharmarasu, Lingaparthi Ravikiran, and School of Electrical and Electronic Engineering. Structural Properties of GaN Grown On AlGaN/AlN Stress Mitigating Layers On 100-mm Si (111) By Ammonia Molecular Beam Epitaxy. 2013.

MLA引文

Agrawal, M., et al. Structural Properties of GaN Grown On AlGaN/AlN Stress Mitigating Layers On 100-mm Si (111) By Ammonia Molecular Beam Epitaxy. 2013.