Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy

• المؤلفون الرئيسيون: Agrawal, M., Radhakrishnan, K., Dharmarasu, Nethaji, Ravikiran, Lingaparthi
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/96498; http://hdl.handle.net/10220/10299
• المؤسسة: Nanyang Technological University

The structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm diameter Si (111) substrate by ammonia molecular beam epitaxy have been reported. High resolution X-ray diffraction, micro-Raman spectroscopy, transmission electron microscopy and secondary ion mass spectroscopy h...