Origin of the two-dimensional hole gas and criteria for its existence in the III-nitride heterostructures

by Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K.
Published 2023

Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy

by Agrawal, M., Radhakrishnan, K., Dharmarasu, Nethaji, Ravikiran, Lingaparthi
Published 2013

In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobi...

by Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Agrawal, Manvi
Published 2021

Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy

by Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Zheng, Y.
Published 2022

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—experimental evidence of the hole trap sta...

by Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Huo, Lili
Published 2023

Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE

by Sun, Z. Z., Radhakrishnan, K., Agrawal, M., Dharmarasu, Nethaji
Published 2011

Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE

by Agrawal, M., Radhakrishnan, K., Sun, Z. Z., Dharmarasu, Nethaji
Published 2011

Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)

by Ravikiran, L., Radhakrishnan, K., Agrawal, M., Munawar Basha, S., Dharmarasu, Nethaji
Published 2014

A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy

by Zheng, Y., Agrawal, Manvi, Dharmarasu, Nethaji, Radhakrishnan, K., Patwal, Shashank
Published 2020

Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy

by Huo, Lili, Lingaparthi, Ravikiran, Dharmarasu, Nethaji, Radhakrishnan, K., Chan, Casimir
Published 2023

Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy

by Agrawal, Manvi, Ravikiran, Lingaparthi, Dharmarasu, Nethaji, Radhakrishnan, K., Karthikeyan, Giri Sadasivam, Zheng, Yuanjin
Published 2017

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures

by Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Ranjan, A., Seah, Alex Tian Long, Huo, Lili
Published 2021

Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxy

by Dharmarasu, Nethaji, Radhakrishnan, K., Agrawal, M., Ravikiran, Lingaparthi, Arulkumaran, Subramaniam, Lee, Kenneth E., Ing, Ng Geok
Published 2013

Non-linear thermal resistance model for the simulation of high power GaN-based devices

by Garciá-Sánchez, S., Iñiguez-de-la-Torre, I., Pérez, S., Ranjan, Kumud, Agrawal, Manvi, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Arulkumaran, Subramaniam, Ng, Geok Ing, González, T., Mateos, J.
Published 2022

On the practical limitations for the generation of Gunn oscillations in highly doped GaN diodes

by Garcia-Sanchez, S., Daher, M. Abou, Lesecq, M., Huo, Lili, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Iniguez-De-La-Torre, I., Vasallo, B. G., Perez, S., Gonzalez, T., Mateos, J.
Published 2023

Studies on GaN based HEMT heterostructures on 100-mm silicon grown by molecular beam epitaxy

by Ravikiran Lingaparthi
Published 2015