Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—experimental evidence of the hole trap sta...

بواسطة Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Huo, Lili
منشور في 2023

Growth instability of N-polar GaN on vicinal SiC substrate using plasma-assisted molecular beam epitaxy

بواسطة Huo, Lili, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K.
منشور في 2025

Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy

بواسطة Huo, Lili, Lingaparthi, Ravikiran, Dharmarasu, Nethaji, Radhakrishnan, K., Chan, Casimir
منشور في 2023

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures

بواسطة Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Ranjan, A., Seah, Alex Tian Long, Huo, Lili
منشور في 2021

On the practical limitations for the generation of Gunn oscillations in highly doped GaN diodes

بواسطة Garcia-Sanchez, S., Daher, M. Abou, Lesecq, M., Huo, Lili, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Iniguez-De-La-Torre, I., Vasallo, B. G., Perez, S., Gonzalez, T., Mateos, J.
منشور في 2023