On the practical limitations for the generation of Gunn oscillations in highly doped GaN diodes

• Main Authors: Garcia-Sanchez, S., Daher, M. Abou, Lesecq, M., Huo, Lili, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Iniguez-De-La-Torre, I., Vasallo, B. G., Perez, S., Gonzalez, T., Mateos, J.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2023
• Subjects: Engineering::Electrical and electronic engineering; Gunn Diodes; Monte Carlo Simulations
• Online Access: https://hdl.handle.net/10356/170741
• Institution: Nanyang Technological University

Planar Gunn diodes based on doped GaN active layers with different geometries have been fabricated and characterized. Gunn oscillations have not been observed due to the catastrophic breakdown of the diodes for applied voltages around 20-25 V, much below the bias theoretically needed for the onset o...