On the practical limitations for the generation of Gunn oscillations in highly doped GaN diodes

• Main Authors: Garcia-Sanchez, S., Daher, M. Abou, Lesecq, M., Huo, Lili, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Iniguez-De-La-Torre, I., Vasallo, B. G., Perez, S., Gonzalez, T., Mateos, J.
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2023
• 主題: Engineering::Electrical and electronic engineering; Gunn Diodes; Monte Carlo Simulations
• 在線閱讀: https://hdl.handle.net/10356/170741
• 機構: Nanyang Technological University

Planar Gunn diodes based on doped GaN active layers with different geometries have been fabricated and characterized. Gunn oscillations have not been observed due to the catastrophic breakdown of the diodes for applied voltages around 20-25 V, much below the bias theoretically needed for the onset o...