A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy

• Main Authors: Zheng, Y., Agrawal, Manvi, Dharmarasu, Nethaji, Radhakrishnan, K., Patwal, Shashank
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; III-nitrides Growth; Si Substrate
• Online Access: https://hdl.handle.net/10356/143634
• Institution: Nanyang Technological University

The Ga–Si interdiffusion during (Al)GaN/AlN growth on Si substrate by plasma assisted molecular beam epitaxy (PA-MBE) is studied. The epilayers were grown using a combination of different III/V ratios for GaN and AlN layers. The columnar morphology of the nitrogen-rich (III/V < 1) AlN nucleation...