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2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure

2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure

由 Patwal, Shashank
出版 2021

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Thesis-Doctor of Philosophy

2

A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy

A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy

由 Zheng, Y., Agrawal, Manvi, Dharmarasu, Nethaji, Radhakrishnan, K., Patwal, Shashank
出版 2020

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