In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobi...

by Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Agrawal, Manvi
Published 2021

A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy

by Zheng, Y., Agrawal, Manvi, Dharmarasu, Nethaji, Radhakrishnan, K., Patwal, Shashank
Published 2020

Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy

by Agrawal, Manvi, Ravikiran, Lingaparthi, Dharmarasu, Nethaji, Radhakrishnan, K., Karthikeyan, Giri Sadasivam, Zheng, Yuanjin
Published 2017

Non-linear thermal resistance model for the simulation of high power GaN-based devices

by Garciá-Sánchez, S., Iñiguez-de-la-Torre, I., Pérez, S., Ranjan, Kumud, Agrawal, Manvi, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Arulkumaran, Subramaniam, Ng, Geok Ing, González, T., Mateos, J.
Published 2022