A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy
The Ga–Si interdiffusion during (Al)GaN/AlN growth on Si substrate by plasma assisted molecular beam epitaxy (PA-MBE) is studied. The epilayers were grown using a combination of different III/V ratios for GaN and AlN layers. The columnar morphology of the nitrogen-rich (III/V < 1) AlN nucleation...
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Main Authors: | Zheng, Y., Agrawal, Manvi, Dharmarasu, Nethaji, Radhakrishnan, K., Patwal, Shashank |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2020
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/143634 |
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Institution: | Nanyang Technological University |
Language: | English |
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