Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

10.1063/1.4948446

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Bibliographic Details
Main Authors: Ju J., Sun B., Haunschild G., Loitsch B., Stoib B., Brandt M.S., Stutzmann M., Koh Y.K., Koblmüller G.
Other Authors: CHEMICAL & BIOMOLECULAR ENGINEERING
Format: Article
Published: 2020
Subjects:
Energy gap
Gallium alloys
III-V semiconductors
Molecular beam epitaxy
Nitrides
Semiconductor alloys
Temperature measurement
Thermal conductivity
Thermoelectric equipment
Thermoelectricity
Confinement effects
Electrical conductivity
Group III nitrides
N-type InGaN
Power factors
Short periods
Ternary nitrides
Thermoelectric properties
Indium alloys
Online Access:https://scholarbank.nus.edu.sg/handle/10635/174628
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Institution: National University of Singapore

Internet

https://scholarbank.nus.edu.sg/handle/10635/174628

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