Characterisation of defects generated during constant current InGaN-on-silicon LED operation

• المؤلفون الرئيسيون: Made, Riko I, Gao, Yu, Syaranamual, G. J., Sasangka, W. A., Zhang, Li, Nguyen, Xuan Sang, Tay, Yee Yan, Herrin, Jason Scott, Thompson, C. V., Gan, Chee Lip
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2017
• الموضوعات: InGaN Degradation; InGaN LED
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/86855; http://hdl.handle.net/10220/44194

We studied the degradation of MOCVD-grown InGaN LEDs on Si substrates under constant current stressing. Characterisations using Deep Level Transient Spectroscopy and Electron Energy Loss Spectroscopy on active areas showed that the stressing had generated defects that have trap states at 0.26 eV bel...