Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation

by Sasangka, W. A., Syaranamual, G. J., Gao, Yu, Made, Riko I, Gan, Chee Lip, Thompson, C. V.
Published 2017

Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress

by Tan, H. T., Gao, Y., Syaranamual, G. J., Sasangka, W. A., Foo, Siew Chuen, Lee, K. H., Arulkumaran, Subramaniam, Ng, Geok Ing, Thompson, C. V., Gan, Chee Lip
Published 2024

Characterisation of defects generated during constant current InGaN-on-silicon LED operation

by Made, Riko I, Gao, Yu, Syaranamual, G. J., Sasangka, W. A., Zhang, Li, Nguyen, Xuan Sang, Tay, Yee Yan, Herrin, Jason Scott, Thompson, C. V., Gan, Chee Lip
Published 2017