Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation

• Main Authors: Sasangka, W. A., Syaranamual, G. J., Gao, Yu, Made, Riko I, Gan, Chee Lip, Thompson, C. V.
• 其他作者: School of Materials Science & Engineering
• 格式: Article
• 語言: English
• 出版: 2017
• 主題: AlGaN/GaN High Electron Mobility Transistors; Electron Mobility
• 在線閱讀: https://hdl.handle.net/10356/86854; http://hdl.handle.net/10220/44195
• 機構: Nanyang Technological University

We have systematically studied the effects of SixN1 − x passivation density on the reliability of AlGaN/GaN high electron mobility transistors. Upon stressing, devices degrade in two stages, fast-mode degradation and followed by slow-mode degradation. Both degradations can be explained as different...