Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors

• Main Authors: Gao, Yu, Gan, Chee Lip, Thompson, C. V., Sasangka, W. A.
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: AlGaN/GaN HEMTs; Leakage Current; Engineering::Materials
• Online Access: https://hdl.handle.net/10356/107592; http://hdl.handle.net/10220/50348
• Institution: Nanyang Technological University

We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Scho...