Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors

Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors

We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Scho...

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Bibliographic Details
Main Authors: Gao, Yu, Gan, Chee Lip, Thompson, C. V., Sasangka, W. A.
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2019
Subjects:
AlGaN/GaN HEMTs
Leakage Current
Engineering::Materials
Online Access:https://hdl.handle.net/10356/107592
http://hdl.handle.net/10220/50348
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Institution: Nanyang Technological University
Language: English
Description
Summary:We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Schottky barrier height of bad devices (0.4 < ϕB0 < 0.62 eV) was found to be lower than that of the good devices (ϕB0 = 0.79 eV). From transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) analysis, we found that this difference is due to the presence of carbon impurities in the nickel layer in the gate region.

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