AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency
AlGaN/GaN HEMT structures have gained significant attention in recent years due to their wide range of applications in power and optoelectronics, including electric vehicles, environmental monitoring, and satellite communication. These structures possess excellent properties such as wide bandgap, hi...
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| 格式: | Thesis-Doctor of Philosophy |
| 語言: | English |
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Nanyang Technological University
2024
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/177664 |
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| 機構: | Nanyang Technological University |
| 語言: | English |