AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency

AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency

AlGaN/GaN HEMT structures have gained significant attention in recent years due to their wide range of applications in power and optoelectronics, including electric vehicles, environmental monitoring, and satellite communication. These structures possess excellent properties such as wide bandgap, hi...

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Bibliographic Details
Main Author: Ahmed Salah Hawash Razeen
Other Authors: Radhakrishnan K
Format: Thesis-Doctor of Philosophy
Language:English
Published: Nanyang Technological University 2024
Subjects:
Engineering
AlGaN/GaN
HEMT
UV photodetectors
Nanophotonics
Online Access:https://hdl.handle.net/10356/177664
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/177664

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