Enhanced performance of ultraviolet AlGaN/GaN photo-HEMTs by optimized channel isolation schemes

Enhanced performance of ultraviolet AlGaN/GaN photo-HEMTs by optimized channel isolation schemes

Solar blind ultraviolet (UV) photodetectors utilizing AlGaN/GaN high electron mobility transistor (HEMT) structure offer a very high responsivity, photo-to-dark current ratio (PDCR), and detectivity. However, the performance of conventional mesa-isolated photo-HEMT is limited due to current leakage...

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Bibliographic Details
Main Authors: Mondal, Ramit Kumar, Xiong, Zhongshu, Ghimire, Mohan Kumar, Lingaparthi, Ravikiran, Nethaji, Dharmarasu, Radhakrishnan, K., Kim, Munho
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2024
Subjects:
Engineering
AlGaN/GaN
UV photodetector
Online Access:https://hdl.handle.net/10356/174662
https://api.elsevier.com/content/abstract/scopus_id/85187105335
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Institution: Nanyang Technological University
Language: English

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https://hdl.handle.net/10356/174662
https://api.elsevier.com/content/abstract/scopus_id/85187105335

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