Enhanced performance of ultraviolet AlGaN/GaN photo-HEMTs by optimized channel isolation schemes

• Main Authors: Mondal, Ramit Kumar, Xiong, Zhongshu, Ghimire, Mohan Kumar, Lingaparthi, Ravikiran, Nethaji, Dharmarasu, Radhakrishnan, K., Kim, Munho
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2024
• Subjects: Engineering; AlGaN/GaN; UV photodetector
• Online Access: https://hdl.handle.net/10356/174662; https://api.elsevier.com/content/abstract/scopus_id/85187105335
• Institution: Nanyang Technological University

Solar blind ultraviolet (UV) photodetectors utilizing AlGaN/GaN high electron mobility transistor (HEMT) structure offer a very high responsivity, photo-to-dark current ratio (PDCR), and detectivity. However, the performance of conventional mesa-isolated photo-HEMT is limited due to current leakage...