Enhanced performance of ultraviolet AlGaN/GaN photo-HEMTs by optimized channel isolation schemes
Solar blind ultraviolet (UV) photodetectors utilizing AlGaN/GaN high electron mobility transistor (HEMT) structure offer a very high responsivity, photo-to-dark current ratio (PDCR), and detectivity. However, the performance of conventional mesa-isolated photo-HEMT is limited due to current leakage...
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| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/174662 https://api.elsevier.com/content/abstract/scopus_id/85187105335 |
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| Institution: | Nanyang Technological University |
| Language: | English |