AlGaN/GaN high electron mobility transistors with implanted ohmic contacts

AlGaN/GaN high electron mobility transistors with implanted ohmic contacts

10.1016/j.tsf.2006.07.133

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Bibliographic Details
Main Authors: Wang, H.T., Tan, L.S., Chor, E.F.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
AlGaN/GaN HEMTs
Contact resistance
DC characteristics
Implantation
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81943
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/81943

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