MODELLING, SIMULATION, FABRICATION AND CHARACTERISATION OF ALGAN/GAN FIN-GATE HIGH ELECTION MOBILITY TRANSISTERS (FIN-HEMTS)

MODELLING, SIMULATION, FABRICATION AND CHARACTERISATION OF ALGAN/GAN FIN-GATE HIGH ELECTION MOBILITY TRANSISTERS (FIN-HEMTS)

Ph.D

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Bibliographic Details
Main Author: REN KAILIN
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Theses and Dissertations
Language:English
Published: 2021
Subjects:
AlGaN/GaN HEMTs,fin-gate,threshold voltage modelling,physical mechanism,dynamic on-state resistance,high temperature stability
Online Access:https://scholarbank.nus.edu.sg/handle/10635/186200
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Institution: National University of Singapore
Language: English

Internet

https://scholarbank.nus.edu.sg/handle/10635/186200

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