An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes

An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes

10.1109/JEDS.2020.2982426

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Bibliographic Details
Main Authors: Chang, C.-Y., Li, Y.-C., Ren, K., Liang, Yung C., Huang, C.-F.
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: Institute of Electrical and Electronics Engineers Inc. 2021
Subjects:
GaN
HEMT
light emitting devices
two-dimensional electron gas
Online Access:https://scholarbank.nus.edu.sg/handle/10635/199234
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Institution: National University of Singapore

Internet

https://scholarbank.nus.edu.sg/handle/10635/199234

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