An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes

10.1109/JEDS.2020.2982426

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Main Authors:	Chang, C.-Y., Li, Y.-C., Ren, K., Liang, Yung C., Huang, C.-F.
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	Institute of Electrical and Electronics Engineers Inc. 2021
Subjects:	GaN HEMT light emitting devices two-dimensional electron gas
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/199234
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-199234
record_format	dspace
spelling	sg-nus-scholar.10635-1992342024-04-16T11:14:49Z An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes Chang, C.-Y. Li, Y.-C. Ren, K. Liang, Yung C. Huang, C.-F. ELECTRICAL AND COMPUTER ENGINEERING GaN HEMT light emitting devices two-dimensional electron gas 10.1109/JEDS.2020.2982426 IEEE Journal of the Electron Devices Society 8 346-349 2021-08-25T09:13:25Z 2021-08-25T09:13:25Z 2020 Article Chang, C.-Y., Li, Y.-C., Ren, K., Liang, Yung C., Huang, C.-F. (2020). An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes. IEEE Journal of the Electron Devices Society 8 : 346-349. ScholarBank@NUS Repository. https://doi.org/10.1109/JEDS.2020.2982426 2168-6734 https://scholarbank.nus.edu.sg/handle/10635/199234 Institute of Electrical and Electronics Engineers Inc. Scopus OA2020
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	GaN HEMT light emitting devices two-dimensional electron gas
spellingShingle	GaN HEMT light emitting devices two-dimensional electron gas Chang, C.-Y. Li, Y.-C. Ren, K. Liang, Yung C. Huang, C.-F. An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes
description	10.1109/JEDS.2020.2982426
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Chang, C.-Y. Li, Y.-C. Ren, K. Liang, Yung C. Huang, C.-F.
format	Article
author	Chang, C.-Y. Li, Y.-C. Ren, K. Liang, Yung C. Huang, C.-F.
author_sort	Chang, C.-Y.
title	An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes
title_short	An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes
title_full	An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes
title_fullStr	An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes
title_full_unstemmed	An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes
title_sort	algan/gan high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes
publisher	Institute of Electrical and Electronics Engineers Inc.
publishDate	2021
url	https://scholarbank.nus.edu.sg/handle/10635/199234
_version_	1800914975257001984

An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes

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