An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes
10.1109/JEDS.2020.2982426
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Main Authors: | , , , , |
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Other Authors: | |
Format: | Article |
Published: |
Institute of Electrical and Electronics Engineers Inc.
2021
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Subjects: | |
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/199234 |
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Institution: | National University of Singapore |
Summary: | 10.1109/JEDS.2020.2982426 |
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