Releasable AlGaN/GaN 2D electron gas heterostructure membranes for flexible wide-bandgap electronics

Releasable AlGaN/GaN 2D electron gas heterostructure membranes for flexible wide-bandgap electronics

The development of transferrable free-standing semiconductor materials and their heterogeneous integration to arbitrary substrates open up new possibilities in improving device performance, exploring nonconventional manufacturing approaches, and offering a pathway to soft, conformal, and flexible el...

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Bibliographic Details
Main Authors: Zhang, Yi-Yu, An, Shu, Zheng, Yi-Xiong, Lai, Junyu, Seo, Jung-Hun, Lee, Kwang Hong, Kim, Munho
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2022
Subjects:
Engineering::Electrical and electronic engineering
Flexible Electronics
AlGaN/GaN High-Electron Mobility Transistors
Online Access:https://hdl.handle.net/10356/156891
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Institution: Nanyang Technological University
Language: English

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https://hdl.handle.net/10356/156891

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