Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique

• Main Authors: Zhuang, Yihao, Ranjan, Kumud, Xie, Qingyun, Xie, Hanlin, Li, Hanchao, Wang, Yue, Liu, Siyu, Ng, Geok Ing
• Other Authors: Interdisciplinary Graduate School (IGS)
• Format: Conference or Workshop Item
• Language: English
• Published: 2024
• Subjects: Computer and Information Science; Engineering; Physics; HEMT; GaN
• Online Access: https://hdl.handle.net/10356/180270; https://www.iwn2024.org/home; https://multisite.ncscale.ncsu.edu/sandbox/wp-content/uploads/sites/18/2024/11/IWN-2024-Program.pdf
• Institution: Nanyang Technological University

This study leverages tri-state pulsed IV technique to characterize the trapping effect in AlN/GaN HEMTs with an AlGaN back barrier (BB).