Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique

Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique

This study leverages tri-state pulsed IV technique to characterize the trapping effect in AlN/GaN HEMTs with an AlGaN back barrier (BB).

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Bibliographic Details
Main Authors:	Zhuang, Yihao, Ranjan, Kumud, Xie, Qingyun, Xie, Hanlin, Li, Hanchao, Wang, Yue, Liu, Siyu, Ng, Geok Ing
Other Authors:	Interdisciplinary Graduate School (IGS)
Format:	Conference or Workshop Item
Language:	English
Published:	2024
Subjects:	Computer and Information Science Engineering Physics HEMT GaN
Online Access:	https://hdl.handle.net/10356/180270 https://www.iwn2024.org/home https://multisite.ncscale.ncsu.edu/sandbox/wp-content/uploads/sites/18/2024/11/IWN-2024-Program.pdf
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Institution:	Nanyang Technological University
Language:	English

Description
Summary:	This study leverages tri-state pulsed IV technique to characterize the trapping effect in AlN/GaN HEMTs with an AlGaN back barrier (BB).