Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique

This study leverages tri-state pulsed IV technique to characterize the trapping effect in AlN/GaN HEMTs with an AlGaN back barrier (BB).

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Bibliographic Details
Main Authors:	Zhuang, Yihao, Ranjan, Kumud, Xie, Qingyun, Xie, Hanlin, Li, Hanchao, Wang, Yue, Liu, Siyu, Ng, Geok Ing
Other Authors:	Interdisciplinary Graduate School (IGS)
Format:	Conference or Workshop Item
Language:	English
Published:	2024
Subjects:	Computer and Information Science Engineering Physics HEMT GaN
Online Access:	https://hdl.handle.net/10356/180270 https://www.iwn2024.org/home https://multisite.ncscale.ncsu.edu/sandbox/wp-content/uploads/sites/18/2024/11/IWN-2024-Program.pdf
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-1802702024-11-12T15:39:04Z Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique Zhuang, Yihao Ranjan, Kumud Xie, Qingyun Xie, Hanlin Li, Hanchao Wang, Yue Liu, Siyu Ng, Geok Ing Interdisciplinary Graduate School (IGS) School of Electrical and Electronic Engineering 12th International Workshop on Nitride Semiconductors (IWN 2024) National GaN Technology Centre, ASTAR Institute of Microelectronics, ASTAR Singapore-MIT Alliance for Research and Technology Energy Research Institute @ NTU (ERI@N) Computer and Information Science Engineering Physics HEMT GaN This study leverages tri-state pulsed IV technique to characterize the trapping effect in AlN/GaN HEMTs with an AlGaN back barrier (BB). Agency for Science, Technology and Research (ASTAR) National Research Foundation (NRF) Submitted/Accepted version This work was supported by SMART LEES+ (NRF Grant No.: M21K6b0134) and NRF/ASTAR under RIE2025 MTC (Grant No.: M23WSNG001). 2024-11-12T02:13:14Z 2024-11-12T02:13:14Z 2024 Conference Paper Zhuang, Y., Ranjan, K., Xie, Q., Xie, H., Li, H., Wang, Y., Liu, S. & Ng, G. I. (2024). Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique. 12th International Workshop on Nitride Semiconductors (IWN 2024). https://hdl.handle.net/10356/180270 https://www.iwn2024.org/home https://multisite.ncscale.ncsu.edu/sandbox/wp-content/uploads/sites/18/2024/11/IWN-2024-Program.pdf en M21K6b0134 M23WSNG001 © 2024 IWN. All rights reserved.This article may be downloaded for personal use only. Any other use requires prior permission of the copyright holder. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	Computer and Information Science Engineering Physics HEMT GaN
spellingShingle	Computer and Information Science Engineering Physics HEMT GaN Zhuang, Yihao Ranjan, Kumud Xie, Qingyun Xie, Hanlin Li, Hanchao Wang, Yue Liu, Siyu Ng, Geok Ing Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique
description	This study leverages tri-state pulsed IV technique to characterize the trapping effect in AlN/GaN HEMTs with an AlGaN back barrier (BB).
author2	Interdisciplinary Graduate School (IGS)
author_facet	Interdisciplinary Graduate School (IGS) Zhuang, Yihao Ranjan, Kumud Xie, Qingyun Xie, Hanlin Li, Hanchao Wang, Yue Liu, Siyu Ng, Geok Ing
format	Conference or Workshop Item
author	Zhuang, Yihao Ranjan, Kumud Xie, Qingyun Xie, Hanlin Li, Hanchao Wang, Yue Liu, Siyu Ng, Geok Ing
author_sort	Zhuang, Yihao
title	Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique
title_short	Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique
title_full	Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique
title_fullStr	Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique
title_full_unstemmed	Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique
title_sort	characterization of deep region trapping effects in aln/gan hemts with an algan back barrier utilizing tri-state pulsed iv technique
publishDate	2024
url	https://hdl.handle.net/10356/180270 https://www.iwn2024.org/home https://multisite.ncscale.ncsu.edu/sandbox/wp-content/uploads/sites/18/2024/11/IWN-2024-Program.pdf
_version_	1816858948229136384

Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique

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