GaN-based semiconductor saturable absorber mirror operating around 415 nm

GaN-based semiconductor saturable absorber mirror operating around 415 nm

10.1016/j.tsf.2006.07.138

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Bibliographic Details
Main Authors: Xiang, N., Lin, F., Li, H.P., Liu, H.F., Liu, W., Ji, W., Chua, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
GaN
Saturable absorber
Semiconductors
Online Access:http://scholarbank.nus.edu.sg/handle/10635/50931
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/50931

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