Influence of GaNAs strain compensation layers upon annealing of GaIn(N)As/GaAs quantum wells

by Liu, H.F., Xiang, N.
Published 2014

Influence of GaNAs strain-compensation layers on the optical properties of Galn(N)As/GaAs quantum wells upon annealing

by Liu, H.F., Xiang, N.
Published 2014

Influence of desert sand and cooling regime on the compressive strength of high strength concrete after high temperatures

by Zhang, M. H., Liu, H. F., Tian, S., Ma, Y. C., Doh, Shu Ing
Published 2020

Anneal-induced interdiffusion in 1.3-μm GaInNAs/GaAs quantum well structures grown by molecular-beam epitaxy

by Liu, H.F., Dixit, V., Xiang, N.
Published 2014

Effect of nitrogen on indium segregation in GaInNAs/GaAs quantum wells

by Dixit, V., Liu, H.F., Xiang, N.
Published 2014

Study of thermal-anneal-induced rearrangement of N-bonding configurations in GalnNAs/GaAs quantum well

by Dixit, V., Liu, H.F., Xiang, N.
Published 2014

Effect of indium segregation on optical and structural properties of GaInNAsGaAs quantum wells at emission wavelength of 1.3 μm

by Liu, H.F., Dixit, V., Xiang, N.
Published 2014

Analysing the thermal-annealing-induced photoluminescence blueshifts for GaInNAs/GaAs quantum wells: A genetic algorithm based approach

by Dixit, V., Liu, H.F., Xiang, N.
Published 2014

Effect of in-segregation on sub bands in Ga1-x′in x′As1-y′/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths

by Dixit, V., Liu, H.F., Xiang, N.
Published 2014

Effect of In-segregation on subbands in GaInNAs/GaAs quantum wells emission around 1.3 and 1.55 micron

by Dixit, V., Liu, H.F., Xiang, N.
Published 2014

Optical gain of segregated GaInNAs/GaAs quantum wells at emission wavelength of 1.3 micron

by Dixit, V., Liu, H.F., Xiang, N.
Published 2014

Layer-by-layer oxidation of InN(0001) thin films into body-center cubic In2O3(111) by cycle rapid thermal annealing

by Liu, H. F., Chi, Dong Zhi, Liu, Wei
Published 2013

Growth-temperature- and thermal-anneal-induced crystalline reorientation of aluminum on GaAs (100) grown by molecular beam epitaxy

by Liu, H.F., Chua, S.J., Xiang, N.
Published 2014

Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy

by Liu, H.F., Xiang, N., Chua, S.J.
Published 2014

Growth mechanism and optical properties of In2O3 nanorods synthesized on ZnO/GaAs (1 1 1) substrate

by Liu, H.F., Hu, G.X., Gong, H.
Published 2014

Growth of InAs on micro- and nano-scale patterned GaAs(001) substrates by molecular beam epitaxy

by Liu, H.F., Xiang, N., Chua, S.J.
Published 2014

On overannealing of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy

by Liu, H.F., Chua, S.J., Xiang, N.
Published 2014

Influence of N incorporation on in content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy

by Liu, H.F., Xiang, N., Chua, S.J.
Published 2014

Raman scattering probe of anharmonic effects due to temperature and compositional disorder in Ga N x As 1-x

by Liu, H.F., Xiang, N., Tripathy, S., Chua, S.J.
Published 2014

Raman scattering probe of anharmonic effects due to temperature and compositional disorder in Ga N x As 1-x

by Liu, H.F., Xiang, N., Tripathy, S., Chua, S.J.
Published 2014