Influence of N incorporation on in content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy

10.1063/1.2335804

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Bibliographic Details
Main Authors: Liu, H.F., Xiang, N., Chua, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56327
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Institution: National University of Singapore