Molecular beam epitaxial growth of GaNAs and GaInNAs and their characterization
This thesis presents the systematic growth and characterization studies of the GaInNAs/GaAs Quantum Well (QW) and related GaNAs bulk material by Molecular Beam Epitaxy (MBE) technique. The motivation of this work lies in the significant advantage in growing optoelectronic devices on GaAs substrate c...
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Format: | Theses and Dissertations |
Published: |
2008
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Online Access: | https://hdl.handle.net/10356/4965 |
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Institution: | Nanyang Technological University |