Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation

Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation

Deep-level transient spectra DLTS and photoresponsivity were measured for Ga0.90In0.10N0.033As0.967 /GaAs and Ga0.96In0.04N0.028As0.967Sb0.005 /GaAs p-i-n photodetector structures. The GaInNAs and GaInNAsSb layers were grown closely lattice matched to GaAs substrate at 460 °C using molecular be...

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Bibliographic Details
Main Authors: Loke, Wan Khai, Yoon, Soon Fatt, Tan, K. H., Wicaksono, Satrio, Fan, Weijun
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:https://hdl.handle.net/10356/100400
http://hdl.handle.net/10220/18128
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/100400
http://hdl.handle.net/10220/18128

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