Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation

• Main Authors: Loke, Wan Khai, Yoon, Soon Fatt, Tan, K. H., Wicaksono, Satrio, Fan, Weijun
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• Online Access: https://hdl.handle.net/10356/100400; http://hdl.handle.net/10220/18128
• Institution: Nanyang Technological University

Deep-level transient spectra DLTS and photoresponsivity were measured for Ga0.90In0.10N0.033As0.967 /GaAs and Ga0.96In0.04N0.028As0.967Sb0.005 /GaAs p-i-n photodetector structures. The GaInNAs and GaInNAsSb layers were grown closely lattice matched to GaAs substrate at 460 °C using molecular be...