GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm
A GaInNAs/AlAs/AlGaAs double-barrier quantum well infrared photodetector was grown by molecular beam epitaxy and fabricated by standard device processes. The growth structure of the as-grown sample was verified by x-ray diffraction measurement. The photoluminescence emission peak, which is relate...
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Main Authors: | , , , , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/100759 http://hdl.handle.net/10220/18144 |
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Institution: | Nanyang Technological University |
Language: | English |