GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm

• المؤلفون الرئيسيون: Ma, B. S., Fan, Weijun, Dang, Y. X., Cheah, Weng Kwong, Loke, Wan Khai, Liu, W., Li, D. S., Yoon, Soon Fatt, Zhang, Dao Hua, Wang, H., Tung, Chih Hang
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: Electrical and Electronic Engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100759; http://hdl.handle.net/10220/18144

A GaInNAs/AlAs/AlGaAs double-barrier quantum well infrared photodetector was grown by molecular beam epitaxy and fabricated by standard device processes. The growth structure of the as-grown sample was verified by x-ray diffraction measurement. The photoluminescence emission peak, which is relate...