Growth and characterization of GaAs-based III-V-N material for p-i-n photodectectors using antimony as a surfactant

by Cheah, Weng Kwong
Published 2011

Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector

by Ma, B. S., Dang, Y. X., Fan, Weijun, Cheah, Weng Kwong, Yoon, Soon Fatt
Published 2013

Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs

by Cheah, Weng Kwong, Fan, Weijun, Yoon, Soon Fatt, Loke, Wan Khai, Liu, R., Wee, A. T. S.
Published 2013

GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm

by Ma, B. S., Fan, Weijun, Dang, Y. X., Cheah, Weng Kwong, Loke, Wan Khai, Liu, W., Li, D. S., Yoon, Soon Fatt, Zhang, Dao Hua, Wang, H., Tung, Chih Hang
Published 2013