GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm

A GaInNAs/AlAs/AlGaAs double-barrier quantum well infrared photodetector was grown by molecular beam epitaxy and fabricated by standard device processes. The growth structure of the as-grown sample was verified by x-ray diffraction measurement. The photoluminescence emission peak, which is relate...

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Bibliographic Details
Main Authors: Ma, B. S., Fan, Weijun, Dang, Y. X., Cheah, Weng Kwong, Loke, Wan Khai, Liu, W., Li, D. S., Yoon, Soon Fatt, Zhang, Dao Hua, Wang, H., Tung, Chih Hang
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/100759
http://hdl.handle.net/10220/18144
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Institution: Nanyang Technological University
Language: English

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