Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region

Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region

In this study, InSb p-i-n photodetectors with In0.82Al0.18Sb barrier layers were grown on a (100) 6° offcut Si substrate by heteroepitaxy via an AlSb/GaSb buffer. Based on an interfacial misfit array growth mode, the dislocations at the GaSb/Si and InSb/AlSb interfaces accommodated the lattice misma...

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Bibliographic Details
Main Authors: Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt, Jia, Bo Wen
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2019
Subjects:
Detectors
DRNTU::Engineering::Electrical and electronic engineering
Infrared
Online Access:https://hdl.handle.net/10356/87347
http://hdl.handle.net/10220/47599
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/87347
http://hdl.handle.net/10220/47599

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