Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region

• Main Authors: Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt, Jia, Bo Wen
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: Detectors; DRNTU::Engineering::Electrical and electronic engineering; Infrared
• Online Access: https://hdl.handle.net/10356/87347; http://hdl.handle.net/10220/47599
• Institution: Nanyang Technological University

In this study, InSb p-i-n photodetectors with In0.82Al0.18Sb barrier layers were grown on a (100) 6° offcut Si substrate by heteroepitaxy via an AlSb/GaSb buffer. Based on an interfacial misfit array growth mode, the dislocations at the GaSb/Si and InSb/AlSb interfaces accommodated the lattice mismatch. The In0.82Al0.18Sb barrier layer increased the 77 K R0A of the detector. From 180 K to 300 K, the generation-recombination mechanism dominated the dark current generation in the detector and surface leakage became dominant below 120 K. The detector exhibited a 77 K responsivity of 0.475 A/W and a Johnson-noise-limited detectivity of 3.08 × 109 cmHz1/2W−1 at 5.3 µm.