Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics

The InSb photodetector on a Si substrate acts as a signal receiver for the mid-infrared silicon photonics application to overcome the limitation of group IV semiconductors. In this paper, we demonstrated an InSb p–i–n photodetector with an InAlSb barrier layer grown on (100) silicon substrates via a...

全面介紹

Saved in:
書目詳細資料
Main Authors: Jia, Bo Wen, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Lee, Kwang Hong, Yoon, Soon Fatt
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2019
主題:
在線閱讀:https://hdl.handle.net/10356/80650
http://hdl.handle.net/10220/50067
標簽: 添加標簽
沒有標簽, 成為第一個標記此記錄!
機構: Nanyang Technological University
語言: English