Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics

• Main Authors: Jia, Bo Wen, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Lee, Kwang Hong, Yoon, Soon Fatt
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: Monolithic Integration; Mid-infrared Photodetector; Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/80650; http://hdl.handle.net/10220/50067
• Institution: Nanyang Technological University

The InSb photodetector on a Si substrate acts as a signal receiver for the mid-infrared silicon photonics application to overcome the limitation of group IV semiconductors. In this paper, we demonstrated an InSb p–i–n photodetector with an InAlSb barrier layer grown on (100) silicon substrates via a...