Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics
The InSb photodetector on a Si substrate acts as a signal receiver for the mid-infrared silicon photonics application to overcome the limitation of group IV semiconductors. In this paper, we demonstrated an InSb p–i–n photodetector with an InAlSb barrier layer grown on (100) silicon substrates via a...
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Main Authors: | , , , , , |
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格式: | Article |
語言: | English |
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2019
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在線閱讀: | https://hdl.handle.net/10356/80650 http://hdl.handle.net/10220/50067 |
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機構: | Nanyang Technological University |
語言: | English |