Growth and characterization of InSb on (1 0 0) Si for mid-infrared application

• المؤلفون الرئيسيون: Jia, Bo Wen, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: Engineering::Electrical and electronic engineering::Semiconductors; Compound Semiconductor; Molecule Beam Epitaxy
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/107586; http://hdl.handle.net/10220/50338; http://dx.doi.org/10.1016/j.apsusc.2018.01.219
• المؤسسة: Nanyang Technological University

Monolithic integration of InSb on (1 0 0) Si is a practical approach to realizing on-chip mid-infrared photonic devices. An InSb layer was grown on a (1 0 0) Si substrate using an AlSb/GaSb buffer containing InSb quantum dots (QDs). The growth process for the buffer involved the growth of GaSb on Si...